2SA1293 - POWER TRANSISTOR

Inchange Semiconductor

General Description

Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@IC= -3A Fast Switching Speed Complement to Type 2SC3258 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high current switching applications.

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2SA1293 power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SA1293
Manufacturer	Inchange Semiconductor
File Size	218.06 KB
Description	POWER TRANSISTOR
Datasheet	2SA1293 Datasheet

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isc Silicon PNP Power Transistor 2SA1293 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@IC= -3A ·Fast Switching Speed ·Complement to Type 2SC3258 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.