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2SA1288 - POWER TRANSISTOR

General Description

Low Collector Saturation Voltage Large Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifiers Switching regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Ba

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isc Silicon PNP Power Transistor 2SA1288 DESCRIPTION ·Low Collector Saturation Voltage ·Large Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifiers ·Switching regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.