Datasheet4U Logo Datasheet4U.com

2SA1265N - POWER TRANSISTOR

Description

Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -7A Good Linearity of hFE Complement to Type 2SC3182N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidel

📥 Download Datasheet

Datasheet preview – 2SA1265N

📁 Similar Datasheet

  • 2SA1265N - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1265 - Silicon PNP Transistor (Toshiba)
  • 2SA1261 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1262 - Silicon PNP Transistor (Sanken electric)
  • 2SA1262 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1263 - Silicon PNP Transistor (Toshiba Semiconductor)
  • 2SA1263N - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1264 - Silicon PNP Transistor (Toshiba)
  • 2SA1264N - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1266 - SILICON PNP TRANSISTOR (KEC)
Other Datasheets by Inchange Semiconductor

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor 2SA1265N DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -7A ·Good Linearity of hFE ·Complement to Type 2SC3182N ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.
Published: |