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2SA1075 - POWER TRANSISTOR

General Description

High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) Good Linearity of hFE Complement to Type 2SC2525 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications switching regulators DC-DC

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isc Silicon PNP Power Transistor 2SA1075 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2525 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·switching regulators ·DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 120 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.