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2SA1041 - POWER TRANSISTOR

Description

High Current Capability Good Linearity of hFE Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) Complement to Type 2SC2431 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed, high voltage sw

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isc Silicon PNP Power Transistor 2SA1041 DESCRIPTION ·High Current Capability ·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Complement to Type 2SC2431 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high voltage switching systems. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -5 A 100 W 175 ℃ Tstg Storage Temperature -65~175 ℃ isc website：www.iscsemi.
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