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2N6769 - N-Channel MOSFET Transistor

Description

VGS Rated at ±20V Silicon Gate for fast switching speeds IDSS 、RDS(ON) , specified at elevated temperature Low drive requirements APPLICATIONS designed for high voltage ,high speed application ,such as off-line switching power applies,UPS,AC and DC motor controls , relay and sole

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N6769 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for fast switching speeds ·IDSS 、RDS(ON) , specified at elevated temperature ·Low drive requirements APPLICATIONS designed for high voltage ,high speed application ,such as off-line switching power applies,UPS,AC and DC motor controls , relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 450 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=37℃ 11 A Total Dissipation@TC=25℃ 150 W Max.
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