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2N6235 - Silicon NPN Power Transistor

General Description

High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 325V(Min) DC Current Gain- : hFE = 25-125@ IC= 1A Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC = 1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 325V(Min) ·DC Current Gain- : hFE = 25-125@ IC= 1A ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC = 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed f for high-voltage medium power and switching reguators applications .