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2N3904 - Silicon NPN Power Transistors

Description

Low Saturation Voltage- : VCE(sat)= 200mV(Max)@ IC =10mA

Complement to Type 2N3906.

Designed for high-speed switching and Amplifier applications.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3904 DESCRIPTION ·Low Saturation Voltage- : VCE(sat)= 200mV(Max)@ IC =10mA ·Complement to Type 2N3906. APPLICATIONS ·Designed for high-speed switching and Amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICP Collector Current-Peak IBM Peak base current PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient VALUE 60 40 6 200 300 100 625 150 -55~150 UNIT V V V mA mA mA mW ℃ ℃ MAX 250 UNIT K/W isc website：www.iscsemi.
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