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2N3440 - Silicon NPN Power Transistor

General Description

Collector Emitter Sustaining Voltage- : VCEO(SUS) = 250 V(Min) DC Current Gain- : hFE = 40(Min) @ IC= 20mA Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high voltage and general purpose applications.

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N3440 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 250 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= 20mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 1 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6.