2N3239 - Silicon NPN Power Transistor

Product Overview

Inchange Semiconductor

Datasheet Details

Part number	2N3239
Manufacturer	Inchange Semiconductor
File Size	170.99 KB
Description	Silicon NPN Power Transistor
Datasheet	2N3239 Datasheet
Additional preview pages of the 2N3239 datasheet.

Product details

Description

Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation.APPLICATIONS Designed for general purpose high power switch and amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuou

📁 Similar Datasheet

2N323 - PNP Transistor (Motorola)
2N3232 - NPN silicon power transistors (Motorola)
2N3233 - Silicon NPN Power Transistors (SavantIC)
2N3234 - Silicon NPN Power Transistors (SavantIC)
2N3235 - NPN silicon power transistors (Motorola)
2N3237 - Silicon NPN Power Transistors (SavantIC)
2N320 - PNP germanium power transistors (Motorola)
2N3202 - Bipolar PNP Device (Seme LAB)

Other Datasheets by Inchange Semiconductor

2N3236 - Silicon NPN Power Transistor
2N3238 - Silicon NPN Power Transistor
2N3240 - Silicon NPN Power Transistor
2N3019 - Silicon NPN Power Transistor
2N3053 - Silicon NPN Power Transistor
2N3054 - Silicon NPN Power Transistors

Published: Nov 22, 2016 |