Download 2N2955HV Datasheet PDF
Inchange Semiconductor
2N2955HV
DESCRIPTION - Excellent Safe Operating Area - DC Current Gain- : h FE=20-70@IC= -4A - Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1V(Max)@ IC= -4A - plement to Type 2N3055HV APPLICATIONS - Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCER VCEO Collector-Emitter Voltage Collector-Emitter Voltage -100 -100 VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous IB Base Current Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -15 -7 115 200 -65~200 A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.52 ℃/W isc website:.iscsemi.cn INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product...