2N2219A Datasheet | Inchange Semiconductor

DESCRIPTION - Collector Current- IC= 0.8A - Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) APPLICATIONS - Designed for general-purpose switching and linear amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous IBM Base Current-Peak PC Collector Power Dissipation@TC=25℃ TJ Junction Temperature Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Thermal Resistance,Junction to Ambient isc Product Specification VALUE 75 40 6 0.8 0.2 0.8 150 -65~150 UNIT V V V A A W ℃ ℃ MAX 187.5 UNIT K/W isc Website：.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR) CEO V(BR)EBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IC=10m A ; IB=0 IE=10μA ;...