The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Date:-12 July, 2019 Data Sheet Issue:- P1
Tentative Data
Insulated Gate Bi-Polar Transistor Type T1440VC17E
Absolute Maximum Ratings
VCES VDC link VGES
VOLTAGE RATINGS
Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage
MAXIMUM LIMITS 1700 900 ±20
UNITS
V V V
IC ICRM IECO PMAX Tj op Tstg
RATINGS
Continuous DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (note 2) Operating temperature range Storage temperature range
Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 110nH.
MAXIMUM LIMITS 1440 2880 1440 4.
T1440VC17E Datasheet
