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SS150TI60110 - Silicon Carbide Schottky Diode

Download the SS150TI60110 datasheet PDF. This datasheet also covers the SS150TA60110 variant, as both devices belong to the same silicon carbide schottky diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • Repetitive Peak Forward Surge Current TVJ = 45°C, tP = 10 ms Half Sine Wave D = 0.3 Operating Virtual Junction Temperature Storage Temperature TC = 25 °C (20 W/device).
  • 600 V SiC Schottky Diode Surface Mount Package Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Behavior Positive Temperature Coefficient for VF.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SS150TA60110_IXYS.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
SS150TA60110 Silicon Carbide Schottky Diode
SS150TC60110 Silicon Carbide Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SS150TA60110, SS150TC60110, SS150TI60110 Silicon Carbide Schottky Diode Part Number SS150TA60110 SS150TC60110 SS150TI60110 VRRM (V) 600 600 600 IF(AVG) (A) 10 10 10 Configuration Triple Common Anode Triple Common Cathode Triple Independent Triple Independent (TI) VRRM = 600 V IF(AVG) = CJ 10 A = 80 pF Triple Anode (TA) Triple Cathode (TC) A = Anode C = Cathode Symbol Parameter VRRM VRSM VDC IF(AVG) IFRM TVJ TSTG PTOT Symbol Repetitive Peak Reverse Voltage Repetitive Surge Reverse Voltage DC Blocking Voltage Average Forward Current TJ = 175°C Test Conditions Maximum Ratings 600 600 600 10 25 -55 to +175 -55 to +175 60 V V V A A Features Repetitive Peak Forward Surge Current TVJ = 45°C, tP = 10 ms Half Sine Wave D = 0.
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