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R1331NS10B - Distributed Gate Thyristor

Download the R1331NS10B datasheet PDF. This datasheet also covers the R1331NS10A variant, as both devices belong to the same distributed gate thyristor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (R1331NS10A-IXYS.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
R1331NS10A Distributed Gate Thyristor
R1331NS10C Distributed Gate Thyristor
R1331NS10D Distributed Gate Thyristor
R1331NS12A Distributed Gate Thyristor
R1331NS12B Distributed Gate Thyristor

Full PDF Text Transcription

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Date:- 17 Dec, 2002 Data Sheet Issue:- 1 Distributed Gate Thyristor Type R1331NS10# to R1331NS12# (Old Type Number: D450CH02-12) Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak reverse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1) MAXIMUM LIMITS 1000-1200 1000-1200 1000-1200 1100-1300 UNITS V V V V IT(AVM) IT(AVM) IT(AVM) IT(RMS) IT(d.c.) ITSM ITSM2 I2t I2t (di/dt)cr VRGM PG(AV) PGM Tj op Tstg OTHER RATINGS Maximum average on-state current, Tsink=55°C, (note 2) Maximum average on-state current. Tsink=85°C, (note 2) Maximum average on-state current. Tsink=85°C, (note 3) Nominal RMS on-state current, Tsink=25°C, (note 2) D.C.
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