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R0809LC10D - Distributed Gate Thyristor

Download the R0809LC10D datasheet PDF. This datasheet also covers the R0809LC10B variant, as both devices belong to the same distributed gate thyristor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (R0809LC10B-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Date:- 01 August 2012 Data Sheet Issue:- 2 Distributed Gate Thyristor Type R0809LC10x Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak reverse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1) MAXIMUM LIMITS 1000 1000 1000 1100 UNITS V V V V IT(AV) IT(AV) IT(AV) IT(RMS) IT(d.c.) ITSM ITSM2 I2t I2t (di/dt)cr VRGM PG(AV) PGM VGD THS Tstg OTHER RATINGS Mean on-state current, Tsink=55°C, (note 2) Mean on-state current. Tsink=85°C, (note 2) Mean on-state current. Tsink=85°C, (note 3) Nominal RMS on-state current, Tsink=25°C, (note 2) D.C. on-state current, Tsink=25°C, (note 4) Peak non-repetitive surge tp=10ms, VRM=0.
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