MMJX1H40N150 - 1500V MOS Gated Thyristor

IXYS (now Littelfuse)

Key Features

Silicon Chip on Direct-Copper Bond (DCB) Substrate.
Isolated Mounting Surface.
2500V~ Electrical Isolation.
Very High Current Capability Advantages.
High Power Density.
Low Gate Drive Requirement.

MMJX1H40N150 1500v mos gated thyristor by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	MMJX1H40N150
Manufacturer	IXYS (now Littelfuse)
File Size	266.81 KB
Description	1500V MOS Gated Thyristor
Datasheet	MMJX1H40N150 Datasheet

Other Datasheets by IXYS (now Littelfuse)

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Full PDF Text Transcription (Reference)

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1500V MOS Gated Thyristor MMJX1H40N150 A VDM = 1500V A (Electrically Isolated Tab) G K G Ks Ks K Symbol VDM VGK VGK ITSM PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C, 1μs TC = 25°C, 10μs TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s 50/60Hz, 1 minute Mounting Force Maximum Ratings 1500 V ±30 V ±40 V 15.5 kA 6.4 kA 320 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 2500 V~ 50..200/11..