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Advanced Technical Information
LKK 47-06C5
VDSS = 600 V ID25 = 47 A Ω/MOSFET RDS(on) max = 45 m
Dual CoolMOS ™ 1) Power MOSFET
Common Source Topology DCB isoated package
4
D1 T1
2
G1
3
S
T2
1 2 3 4 5
1
G2
5
D2
MOSFET T1/T2 Symbol VDSS VD1D2 VGS ID25 ID90 EAS EAR TC = 25°C TC = 90°C single pulse repetitive ID = 11 A; TC = 25°C Conditions TVJ = 25°C TVJ = 25°C Maximum Ratings 600 ±600 ±20 47 32 1950 3 V V V A A mJ mJ
Features
• fast CoolMOS ™ 1) power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density
Applications
• AC Switch - power regulation of AC heating - light dimming • Power factor correction (PFC) interleaved oper
LKK47-06C5 Datasheet
