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LGB15N41ATI, LGD15N41ATI 410 V, 15 A N-Channel Ignition IGBT
Agency Approvals
Environmental Approvals
Pinout Diagram
TO-252 (DPAK)
Functional Diagram
TO-263 (D2PAK)
Datasheet
Product Summary
Characteristic VCES IC
Value 410 15
Unit V A
Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD
inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.