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IXYX200N65B3 - IGBT

Download the IXYX200N65B3 datasheet PDF. This datasheet also covers the IXYK200N65B3 variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Optimized for 10-30kHz Switching.
  • Square RBSOA.
  • Avalanche Rated.
  • Short Circuit Capability.
  • High Current Handling Capability Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXYK200N65B3-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXYA20N120C3HV 1200V XPT GenX3 IGBTs IXYS Corporation
IXYB82N120C3H1 High-Speed IGBT IXYS Corporation
IXYH20N120C3 1200V XPT GenX3 IGBTs IXYS Corporation
IXYH50N120C3 High-Speed IGBT IXYS Corporation
IXYH50N120C3D1 High-Speed IGBT IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXYX25N250CV1 High Voltage IGBT
IXYX25N250CV1HV High Voltage IGBT
IXYX100N120B3 IGBT
IXYX100N120C3 High-Speed IGBT
IXYX100N65B3D1 IGBT

Full PDF Text Transcription

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Advance Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 10-30kHz Switching IXYK200N65B3 IXYX200N65B3 VCES = IC110 = VCE(sat)  tfi(typ) = 650V 200A 1.70V 157ns TO-264 (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V ±30 V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 0 Clamped Inductive Load VGE = 15V, VCE = 400V, TJ = 150°C RG = 10, Non Repetitive TC = 25°C 410 160 200 1100 100 1 ICM = 200 @VCE VCES 8 1560 -55 ... +175 175 -55 ...
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