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IXYP8N90C3D1 - IGBT

Download the IXYP8N90C3D1 datasheet PDF. This datasheet also covers the IXYA8N90C3D1 variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • Optimized for Low Switching Losses.
  • Square RBSOA.
  • Positive Thermal Coefficient of Vce(sat).
  • Anti-Parallel Ultra Fast Diode.
  • Avalanche Rated.
  • International Standard Packages Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXYA8N90C3D1-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXYP20N120C3 1200V XPT GenX3 IGBTs IXYS Corporation
IXYA20N120C3HV 1200V XPT GenX3 IGBTs IXYS Corporation
IXYB82N120C3H1 High-Speed IGBT IXYS Corporation
IXYH20N120C3 1200V XPT GenX3 IGBTs IXYS Corporation
IXYH50N120C3 High-Speed IGBT IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXYP8N90C3 IGBT
IXYP10N65B3D1 IGBT
IXYP10N65C3 IGBT
IXYP10N65C3D1 IGBT
IXYP10N65C3D1M Extreme Light Punch Through IGBT

Full PDF Text Transcription

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900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYA8N90C3D1 IXYP8N90C3D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 900 V 900 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 30 Clamped Inductive Load TC = 25°C 20 8 12 48 4 15 ICM = 16 @VCE VCES 125 -55 ... +175 175 -55 ... +175 A A A A A mJ A W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Torque (TO-220) Mounting Force (TO-263) 1.13/10 10..65 / 2.2..14.6 Nm/lb.in. N/lb. TO-263 TO-220 2.5 g 3.
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