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IXXN200N65A4 - Extreme Light Punch Through IGBT

Features

  • Optimized for Low Conduction and Switching Losses.
  • miniBLOC, with Aluminium Nitride Isolation.
  • International Standard Package.
  • Isolation Voltage 2500V~.
  • Optimized for 5-20kHz Switching.
  • Square RBSOA.
  • Short Circuit Capability.
  • High Current Handling Capability.
  • Easy to Parallel Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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Datasheet preview – IXXN200N65A4

Datasheet Details

Part number IXXN200N65A4
Manufacturer IXYS
File Size 215.41 KB
Description Extreme Light Punch Through IGBT
Datasheet download datasheet IXXN200N65A4 Datasheet
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Preliminary Technical Information XPTTM 650V IGBT GenX4TM Extreme Light Punch Through IGBT for 5-20kHz Switching IXXN200N65A4 VCES = 650V IC110 = 200A V CE(sat)  1.80V tfi(typ) = 123ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) Leads Current Limit TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 2, Non Repetitive TC = 25°C 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Maximum Ratings 650 V 650 V ±20 V ±30 V 410 A 200 A 200 A 1200 A ICM = 400 A  @VCE VCES 10 μs 1250 -55 ...
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