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XPTTM 600V IGBT GenX3TM w/ Diode
IXXH50N60C3D1
Extreme Light Punch Through IGBT for 20-60 kHz Switching
VCES = 600V
I
= 50A
C110
V 2.30V CE(sat)
tfi(typ) = 42ns
Symbol
VCES V
CGR
VGES VGEM
I
C25
IC110 IF110 ICM
I A
EAS
SSOA (RBSOA)
tsc (SCSOA)
PC TJ TJM T
stg
TL
M d
Weight
Test Conditions
TJ = 25°C to 175°C
T J
=
25°C
to
175°C,
R GE
=
1M
Continuous
Transient
T = 25°C (Chip Capability) C
TC = 110°C TC = 110°C
TC = 25°C, 1ms
T = 25°C C
TC = 25°C
V GE
=
15V,
T VJ
=
150°C,
R G
=
5
Clamped Inductive Load
VGE= 15V, VCE = 360V, TJ = 150°C RG = 22, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.
IXXH50N60C3D1 Datasheet
