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IXXH40N65C4D1 - Extreme Light Punch Through IGBT

Features

  • Optimized for 5-20kHz Switching.
  • Square RBSOA.
  • Anti-Parallel Diode.
  • Avalanche Rated.
  • Short Circuit Capability.
  • International Standard Package Advantages.
  • High Power Density.
  • Extremely Rugged.
  • Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 40A, VGE = 15V, Note 1 T.

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Full PDF Text Transcription

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Advance Technical Information XPTTM 650V IGBT GenX4TM w/Diode IXXH40N65C4D1 Extreme Light Punch Through IGBT for 5-20 kHz Switching VCES = 650V IC110 = 40A V CE(sat)  2.3V tfi(typ) = 27ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 650 V 650 V ±20 V ±30 V 110 A 40 A 55 A 215 A ICM = 80 A  @VCE VCES 10 μs 455 -55 ... +175 175 -55 ...
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