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IXTR62N15P - Power MOSFET

Download the IXTR62N15P datasheet PDF. This datasheet also covers the IXTC62N15P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • l International standard isolated packages l UL recognized packages l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic diode Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99622E(05/06) Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTC62N15P-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXTA05N100 Power MOSFET IXYS Corporation
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IXTA08N50D2 N-Channel MOSFET IXYS Corporation
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTR102N65X2 Power MOSFET
IXTR120P20T Power MOSFET
IXTR140P10T Power MOSFET
IXTR16P60P Power MOSFET
IXTR170P10P Power MOSFET

Full PDF Text Transcription

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Preliminary Technical Information PolarHTTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated IXTC 62N15P IXTR 62N15P VDSS = ID25 = RDS(on) ≤ 150 36 45 V A mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 10 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Mounting force ISOPLUS220 ISOPLUS247 ISOPLUS220 ISOPLUS247 Maximum Ratings 150 V 150 V ± 20 ± 30 36 150 50 30 1.0 V V A A A mJ J 10 V/ns 150 -55 ... +175 150 -55 ... +150 300 11..65 / 2.5..15 20..120 / 4.5..
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