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Preliminary Technical Information
TrenchPTM Power MOSFET
IXTR210P10T
VDSS = ID25 = ≤RDS(on)
-100V -195A
8mΩ
P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
ISOPLUS247 E153432
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD VISOL
FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force
Maximum Ratings -100 -100
±15 ±25
-195 -160 - 800
-100 3
V V
V V
A A A
A J
10
595
- 55 ... +150 150
- 55 ... +150
300 260
2500
V/ns
W
°C °C °C
°C °C
V~
20..120/4.5..
IXTR210P10T Datasheet
