Datasheet4U Logo Datasheet4U.com

IXTQ480P2 - Power MOSFET

Features

  • Avalanche Rated.
  • Fast Intrinsic Diode.
  • Dynamic dv/dt Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXTQ480P2 N-ChannelMOSFET INCHANGE
IXTQ48N20T N-Channel MOSFET INCHANGE
IXTQ40N50L2 N-Channel MOSFET INCHANGE
IXTQ40N50Q N-Channel MOSFET INCHANGE
IXTQ42N25P Power MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTQ48N20T Power MOSFET
IXTQ40N50L2 Power MOSFET
IXTQ40N50Q Power MOSFET
IXTQ44P15T Power MOSFET
IXTQ450P2 Power MOSFETs

Full PDF Text Transcription

Click to expand full text
Preliminary Technical Information PolarP2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTQ480P2 VDSS = ID25 =  RDS(on) = trr(typ) 500V 52A 120m 400ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque Maximum Ratings 500 V 500 V  30 V  40 V 52 A 150 A 52 A 1.5 J 10 V/ns 960 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13/10 Nm/lb.in. 5.
Published: |