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IXTQ32P20T - Power MOSFET

Download the IXTQ32P20T datasheet PDF. This datasheet also covers the IXTA32P20T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA32P20T-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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Preliminary Technical Information TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA32P20T IXTP32P20T IXTQ32P20T IXTH32P20T TO-263 AA (IXTA) TO-220AB (IXTP) VDSS = ID25 = ≤RDS(on) - 200V - 32A 130mΩ TO-3P (IXTQ) G S D (Tab) GD S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient - 200 - 200 + 15 + 25 V V V V TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C - 32 - 96 - 32 1 300 -55 ... +150 150 -55 ... +150 A A A J W °C °C °C 1.6mm (0.062 in.) from Case for 10s Plastic body for 10s 300 °C 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220, TO-247 & TO-3P) 1.
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