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IXTP56N15T - Power MOSFETs

Download the IXTP56N15T datasheet PDF. This datasheet also covers the IXTA56N15T variant, as both devices belong to the same power mosfets family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z z z z z z TO-220AB (IXTP) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-220) TO-263 TO-220 300 260 1.13 / 10 2.5 3.0 International Standard Packages 175°C Operating Temperature High Current Handling Capability Avalanche Rated Fast Intrinsic Rectifier Dynamic dv/dt Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA56N15T-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTP50N20PM Power MOSFET
IXTP50N25T Trench Gate Power MOSFET
IXTP5N60P PolarHV Power MOSFET
IXTP02N120P Power MOSFET
IXTP05N100M N-Channel MOSFET

Full PDF Text Transcription

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TrenchTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTA56N15T IXTP56N15T VDSS ID25 RDS(on) = 150V = 56A ≤ 36mΩ TO-263 AA (IXTA) G S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 56 140 5 500 3 300 -55 ... +175 175 -55 ... +175 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g g Features z z z z z z z TO-220AB (IXTP) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain 1.6mm (0.062in.
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