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IXTP3N100D2 - MOSFET

Download the IXTP3N100D2 datasheet PDF. This datasheet also covers the IXTA3N100D2 variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Normally ON Mode.
  •  International Standard Packages.
  • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA3N100D2-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTP3N110 (IXTx3N1x0) High Voltage Power MOSFETs IXYS Corporation
IXTP3N120 Power MOSFET IXYS Corporation
IXTP3N50D2 N-Channel MOSFET IXYS Corporation
IXTP3N50P Power MOSFET IXYS Corporation
IXTP3N60P N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTP3N100P MOSFET
IXTP300N04T2 Power MOSFET
IXTP32N20T Power MOSFET
IXTP32N65X Power MOSFET
IXTP32N65XM Power MOSFET

Full PDF Text Transcription

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Depletion Mode MOSFET IXTA3N100D2 IXTP3N100D2 N-Channel D G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-263 TO-220 Maximum Ratings 1000 V 20 V 30 V 125 W - 55 ... +150 150 - 55 ... +150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS = - 5V, ID = 250A VGS(off) VDS = 25V, ID = 250A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V RDS(on) ID(on) VGS = 0V, ID = 1.5A, Note 1 VGS = 0V, VDS = 50V, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 1000 V - 2.5 - 4.
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