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IXTK90P20P - Power MOSFET

Download the IXTK90P20P datasheet PDF. This datasheet also covers the IXTX90P20P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Rugged PolarPTM Process.
  • Avalanche Rated.
  • Fast Intrinsic Diode.
  • Low Package Inductance Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTX90P20P_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTK90N15 N-Channel MOSFET INCHANGE
IXTK100N25P N-Channel MOSFET IXYS Corporation
IXTK102N30P PolarHT Power MOSFET IXYS Corporation
IXTK102N30P N-Channel MOSFET INCHANGE
IXTK110N20L2 N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTK90N15 N-Channel MOSFET
IXTK90N25L2 Power MOSFET
IXTK102N65X2 Power MOSFET
IXTK110N20L2 Power MOSFET
IXTK120N20P PolarHT Power MOSFET

Full PDF Text Transcription

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PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTK90P20P IXTX90P20P VDSS = ID25 =  RDS(on) - 200V - 90A 44m TO-264 (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings - 200 V - 200 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C - 90 - 270 - 90 3.5 10 890 -55 ... +150 150 -55 ... +150 A A A J V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (PLUS247) Mounting Torque (TO-264) 20..120 / 4.5..27 1.13 / 10 N/lb Nm/lb.
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