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IXTK5N250 - High Voltage Power MOSFETs

Features

  • z Avalanche Rated z Fast Intrinsic Diode z Guaranteed FBSOA at 75°C z Low Package Inductance Advantages z Easy to Mount z Space Savings.

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Full PDF Text Transcription

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Advance Technical Information High Voltage Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA IXTK5N250 IXTX5N250 VDSS ID25 RDS(on) = 2500V = 5A < 8.8Ω TO-264 (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 2500 2500 V V ±30 V ±40 V 5A 20 A 2.5 A 2.5 J 960 W -55 to +150 150 -55 to +150 300 260 °C °C °C °C °C 1.13/10 20..120 /4.5..27 Nm/lb.in. N/lb.
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