Datasheet4U Logo Datasheet4U.com

IXTH3N100P - MOSFET

Download the IXTH3N100P datasheet PDF. This datasheet also covers the IXTA3N100P variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA3N100P-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTH3N120 Power MOSFET IXYS Corporation
IXTH300N04T2 N-Channel MOSFET INCHANGE
IXTH30N50 Power MOSFET IXYS Corporation
IXTH30N50 N-Channel MOSFET INCHANGE
IXTH30N50L N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTH300N04T2 Power MOSFET
IXTH30N45 N-Channel MOSFET
IXTH30N50L Power MOSFET
IXTH30N50L2 Power MOSFET
IXTH30N50P PolarHV Power MOSFET

Full PDF Text Transcription

Click to expand full text
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N100P IXTP3N100P IXTH3N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 1000 20 30 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 3 6 3 200 10 125 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-247 2.5 g 3.0 g 6.
Published: |