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IXTA8N70X2 - Power MOSFET

Download the IXTA8N70X2 datasheet PDF. This datasheet also covers the IXTU8N70X2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTU8N70X2-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTA8N70X2 N-Channel MOSFET INCHANGE
IXTA8N50P N-Channel MOSFET INCHANGE
IXTA8N65X2 N-Channel MOSFET INCHANGE
IXTA80N075L2 N-Channel MOSFET INCHANGE
IXTA80N10T N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTA8N50P PolarHV Power MOSFET
IXTA8N65X2 Power MOSFET
IXTA80N075L2 Power MOSFET
IXTA80N10T Power MOSFET
IXTA80N12T2 Power MOSFET

Full PDF Text Transcription

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Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTU8N70X2 IXTY8N70X2 IXTA8N70X2 IXTP8N70X2 VDSS = ID25 =  RDS(on) 700V 8A 500m TO-251 (IXTU) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 700 V 700 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 8 16 4 250 50 150 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6 Mounting Torque (TO-220) 1.13 / 10 N/lb Nm/lb.
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