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IXTA76N25T - Power MOSFET

Download the IXTA76N25T datasheet PDF. This datasheet also covers the IXTP76N25T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Avalanche Rated.
  • High Current Handling Capability.
  • Fast Intrinsic Rectifier.
  • Low RDS(on) Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTP76N25T_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTA76N25T N-Channel MOSFET INCHANGE
IXTA76N075T N-Channel MOSFET INCHANGE
IXTA76N075T Power MOSFET IXYS Corporation
IXTA70N075T2 N-Channel MOSFET INCHANGE
IXTA70N085T N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTA76P10T Power MOSFET
IXTA70N075T2 Power MOSFET
IXTA75N10P N-Channel MOSFET
IXTA7N60P Power MOSFET
IXTA02N250 High Voltage Power MOSFET

Full PDF Text Transcription

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TrenchTM Power MOSFET N-Channel Enhancement Mode IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T VDSS = ID25 = RDS(on)  250V 76A 44m Typical Avalanched BV = 300V TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G S D (Tab) GD S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 250 V 250 V  20 V  30 V TC = 25C TC = 25C, Pulse Width Limited by TJM 76 A 170 A TC = 25C TC = 25C 8 A 1.5 J TC = 25C 460 W -55 ... +150 C 150 C -55 ... +150 C Maximum Lead Temperature for Soldering Plastic Body for 10s 300 °C 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220, TO-3P & TO-247) 1.
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