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IXTA60N10T - Power MOSFET

Download the IXTA60N10T datasheet PDF. This datasheet also covers the IXTP60N10T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Ultra-Low On Resistance.
  • Avalanche Rated.
  • Low Package Inductance - Easy to Drive and to Protect.
  • 175C Operating Temperature.
  • Fast Intrinsic Diode Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTP60N10T_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTA60N10T N-Channel MOSFET INCHANGE
IXTA60N20T N-Channel MOSFET INCHANGE
IXTA62N15P PolarHT Power MOSFET IXYS Corporation
IXTA62N15P N-Channel MOSFET INCHANGE
IXTA64N10L2 N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTA60N20T Power MOSFET
IXTA64N10L2 Power MOSFET
IXTA6N100D2 N-Channel MOSFET
IXTA6N100D2HV Power MOSFET
IXTA6N50P Power MOSFET

Full PDF Text Transcription

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TrenchTM Power MOSFET IXTA60N10T IXTP60N10T N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V  20 V  30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 60 180 10 500 176 -55 ... +175 175 -55 ... +175 A A A mJ W  C  C  C Maximum Lead Temperature for Soldering 300 1.6 mm (0.062in.) from Case for 10s 260 Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 TO-263 2.5 TO-220 3.0 °C °C N/lb Nm/lb.
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