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IXTA3N120HV - High Voltage Power MOSFET

Features

  • High Voltage Package.
  • Fast Intrinsic Diode.
  • Avalanche Rated.
  • Molding Epoxies meet UL 94 V-0 Flammability Classification.
  • High Blocking Voltage Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Full PDF Text Transcription

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High Voltage Power MOSFET IXTA3N120HV N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Maximum Ratings 1200 V 1200 V 20 V 30 V 3 A 12 A 3 A 700 mJ 5 V/ns 200 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 2.
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