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IXTA26P10T - Power MOSFET

Download the IXTA26P10T datasheet PDF. This datasheet also covers the IXTY26P10T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Avalanche Rated.
  • Extended FBSOA.
  • Fast Intrinsic Diode.
  • Low RDS(ON) and QG Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTY26P10T-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTY26P10T IXTA26P10T IXTP26P10T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220 Maximum Ratings - 100 V - 100 V 15 V 25 V - 26 A - 80 A - 26 A 300 mJ 150 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 0.35 g 2.50 g 3.
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