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IXTA1R4N100P - Power MOSFET

Download the IXTA1R4N100P datasheet PDF. This datasheet also covers the IXTY1R4N100P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z z z z S D (Tab) TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) G DS D (Tab) 1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Force TO-252 TO-263 TO-220 (TO-263) Mounting Torque (TO-220) 300 260 10..65/2.2..14.6 1.13 / 10 0.35 2.50 3.00 G = Gate S = Source D = Drain Tab = Drain International Standard Packages Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IG.

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Note: The manufacturer provides a single datasheet file (IXTY1R4N100P-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXTA1R4N100P N-Channel MOSFET INCHANGE
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTA1R4N120P Power MOSFET
IXTA1R6N100D2HV High Voltage Depletion Mode Power MOSFET
IXTA100N04T2 Power MOSFET
IXTA100N15X4 Power MOSFET
IXTA102N15T Power MOSFET

Full PDF Text Transcription

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PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P VDSS ID25 RDS(on) = 1000V = 1.4A ≤ 11.8Ω TO-252 (IXTY) G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 1.4 3.0 1.4 100 10 63 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C N/lb. Nm/lb.in. g g g Features z z z z z S D (Tab) TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) G DS D (Tab) 1.6mm (0.
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