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IXKP20N60C5 - Power MOSFET

Download the IXKP20N60C5 datasheet PDF. This datasheet also covers the IXKH20N60C5 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • fast CoolMOS™ 1) power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness.
  • Enhanced total power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXKH20N60C5_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXKP20N60C5 N-Channel MOSFET INCHANGE
IXKP24N60C5 N-Channel MOSFET INCHANGE
IXKC13N80C CoolMOS Power MOSFET IXYS Corporation
IXKC13N80C N-Channel MOSFET INCHANGE
IXKC15N60C5 N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXKP24N60C5 CoolMOS Power MOSFET
IXKP10N60C5M CoolMOS Power MOSFET
IXKP13N60C5M CoolMOS Power MOSFET
IXKC15N60C5 Power MOSFET
IXKC19N60C5 Power MOSFET

Full PDF Text Transcription

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IXKH 20N60C5 IXKP 20N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D ID25 = 20 A VDSS = 600 V RDS(on) max = 0.2 Ω TO-247 AD (IXKH) G G D S S q D(TAB) TO-220 AB (IXKP) G D S MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Symbol TC = 25°C TC = 90°C single pulse repetitive ID = 6.6 A; TC = 25°C Conditions TVJ = 25°C Maximum Ratings 600 ± 20 20 13 435 0.
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