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IXHH40N150HV - 1500V MOS Gated Thyristor

Features

  • Very High Voltage Package.
  • Very High Current Capability Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXHX40N150V1HV 1500V MOS Gated Thyristor

Full PDF Text Transcription

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Preliminary Technical Information 1500V MOS Gated Thyristor IXHH40N150HV VDM A = 1500V G K TO-247HV Symbol VDM VGK VGK ITSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C, 1μs TC = 25°C, 10μs TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Torque Maximum Ratings 1500 V ±30 V ±40 V 7.6 kA 3.5 kA 695 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.
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