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IXGT60N60C3D1 - High Speed PT IGBT

Download the IXGT60N60C3D1 datasheet PDF. This datasheet also covers the IXGH60N60C3D1 variant, as both devices belong to the same high speed pt igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Optimized for Low Switching Losses z Square RBSOA z High Avalanche Capability z Anti-Parallel Ultra Fast Diode z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH60N60C3D1-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGT64N60B3 Medium speed low Vsat PT IGBT
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Full PDF Text Transcription

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GenX3TM 600V IGBTs IXGH60N60C3D1 with Diode IXGT60N60C3D1* *Obsolete Part Number High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = V ≤ CE(sat) tfi (typ) = 600V 60A 2.5V 50ns TO-247 (IXGH) Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C, (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 600 V 600 V ±20 V ±30 V 75 A 60 A 26 A 300 A 40 A 400 mJ ICM = 125 A ≤ VCE VCES 380 W -55 ...
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