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IXGT40N120A2 - High Voltage IGBT

Download the IXGT40N120A2 datasheet PDF. This datasheet also covers the IXGH40N120A2 variant, as both devices belong to the same high voltage igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • International standard packages.
  • Low VCE(sat) - for minimum on-state conduction losses.
  • MOS Gate turn-on - drive simplicity.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH40N120A2-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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High Voltage IGBT Low VCE(sat) Preliminary Data Sheet IXGH 40N120A2 IXGT 40N120A2 IXGH 40N120A2 IXGT 40N120A2 V = 1200 I CES = 75 V ≤C25 CE(sat) 2.0 V A V Symbol Test Conditions Maximum Ratings VCES VCES VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TTJsMtg TL TSOLD Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C Continuous Transient TC = 25°C, IGBT chip capability TC = 110°C TJ ≤ 150°C, tp < 300 μs VGE = 15 V, TVJ = 150°C, RG = 5 Ω Clamped inductive load, VCE < 960 V TC = 25°C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 seconds Plastic body for 10 seconds Mounting torque (ixgh) (IXGH) (IXGT) 1200 1200 ± 20 ± 30 75 40 160 ICM = 80 V V V V A A A A 360 -55 ... +150 150 -55 ... +150 300 W °C °C °C °C 260 °C 1.3/10 Nm/lb.in. 6.0 g 4.
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