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IXGR72N60C3 - High-Speed Low-Vsat PT IGBT

Features

  • mJ A.
  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Optimized for Low Switching Losses W.
  • Square RBSOA.
  • Isolated Mounting Surface C.
  • Avalanche Rated C.
  • 2500V Electrical Isolation C °C Advantages °C V~.
  • High Power Density.
  • Low Gate Drive Requirement N/lb g.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGR72N60C3D1 IGBT
IXGR72N60A3 IGBT
IXGR72N60B3H1 Medium Speed Low Vsat PT IGBT
IXGR120N60B IGBT
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Full PDF Text Transcription

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Preliminary Technical Information GenX3TM 600V IGBT (Electrically Isolated Tab) High-Speed Low-Vsat PT IGBT 40-100 kHz Switching IXGR72N60C3* *Obsolete Part Number VCES IC110 VCE(sat) tfi(typ) = 600V = 35A £ 2.7V = 55ns ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight TJ = 25C to 150C 600 TJ = 25C to 150C, RGE = 1M 600 Continuous 20 Transient 30 e TC = 25C TC = 110C t TC = 25C, 1ms TC = 25C le TC =25C VGE = 15V, TVJ = 125C, RG = 2 Clamped Inductive Load o TC = 25C 80 35 400 50 500 ICM = 150 VCE  VCES 200 -55 ... +150 150 -55 ... +150 s Maximum Lead Temperature for Soldering 300 Plastic Body for 10s 260 50/60 Hz, 1 Minute 2500 Ob Mounting Force 20..
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