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IXGR50N60C2D1 - HiPerFAST IGBT

Download the IXGR50N60C2D1 datasheet PDF. This datasheet also covers the IXGR50N60C2 variant, as both devices belong to the same hiperfast igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • Very high frequency IGBT and anti-parallel FRED in one package.
  • Square RBSOA.
  • High current handling capability.
  • MOS Gate turn-on for drive simplicity.
  • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGR50N60C2_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXGR50N60B HiPerFAST IGBT ISOPLUS247 IXYS Corporation
IXGR50N60BD1 HiPerFAST IGBT ISOPLUS247 IXYS Corporation
IXGR24N60C IGBT IXYS Corporation
IXGR32N60CD1 HiPerFAST IGBT IXYS Corporation
IXGR35N120B (IXGR35N120B/C) HiPerFAST IGBT ISOPLUS247 IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGR50N60C2 HiPerFAST IGBT
IXGR50N60B2 HiPerFAST IGBT
IXGR50N60B2D1 HiPerFAST IGBT
IXGR50N90B2D1 IGBT
IXGR120N60B IGBT

Full PDF Text Transcription

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www.DataSheet4U.com HiPerFAST TM IGBT with Diode C2-Class High Speed IGBTs Preliminary Data Sheet IXGR 50N60C2 IXGR 50N60C2D1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 48 ns Symbol V CES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC VISOL TJ TJM Tstg Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C 50/60 Hz RMS, t = 1m Maximum Ratings 600 600 ± 20 ± 30 75 36 300 ICM = 100 200 2500 -55 ... +150 150 -55 ...
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