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IXGR32N170AH1 - High Voltage IGBT

Features

  • z Electrically Isolated tab z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification.

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Full PDF Text Transcription

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Advance Technical Information www.DataSheet4U.com High Voltage IGBT with Diode Electrically Isolated Tab IXGR 32N170AH1 VCES IC25 VCE(sat) tfi(typ) = 1700 V = 26 A = 5.2 V = 50 ns Symbol VCES VCGR VGES VGEM IC25 IC90 IF90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg FC VISOL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω TC = 25°C Maximum Ratings 1700 1700 ± 20 ± 30 26 17 14 200 ICM = 70 @ 0.8 VCES 10 200 -55 ... +150 150 -55 ...
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