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IXGL200N60B3 - Medium speed low Vsat PT IGBT

Features

  • z Silocon chip on Direct-Copper Bond (DCB) substrate z Isolated mounting surface z Square RBSOA z High current handling capability z 2500V electrical isolation Advantages z High power density z Low gate drive requirement.

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Full PDF Text Transcription

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GenX3TM 600V IGBT Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGL200N60B3 VCES = 600V IC110 = 90A VCE(sat) ≤ 1.50V tfi(typ) = 183ns Symbol VCES VCGR VGES VGEM IC25 I C110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C (chip capability) TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 1Ω Clamped inductive load @ VCE ≤ 600V TC = 25°C Maximum lead temperature for soldering Plastic body for 10s 50/60Hz, RMS, 1 minute IISOL ≤ 1mA t = 1s Mounting force Maximum Ratings 600 V 600 V ±20 V ±30 V 150 A 90 A 600 A ICM = 300 A 400 -55 ... +150 150 -55 ... +150 300 260 2500 3000 20..120/4.5..27 8 W °C °C °C °C °C V~ V~ N/lb.
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