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IXGJ50N60C4D1 - High-Gain IGBT

Features

  • z Optimized for Low Switching Losses z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Anti-Parallel Ultra Fast Diode z Square RBSOA Advantages z Easy to Mount z Space Savings Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 36A, VGE = 15V, Note 1 TJ = 125°C Characteristic.

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Datasheet Details

Part number IXGJ50N60C4D1
Manufacturer IXYS
File Size 401.97 KB
Description High-Gain IGBT
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High-Gain IGBT w/ Diode (Electrically Isolated Tab) Preliminary Technical Information IXGJ50N60C4D1 VCES = IC110 = V ≤ CE(sat) 600V 21A 2.50V High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Force 50/60 Hz, RM, t = 1min Maximum Ratings 600 V 600 V ±20 V ±30 V 52 A 21 A 12 A 220 A ICM = 72 A ≤ VCE VCES 125 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 260 20..120 / 4.5..27 °C °C N/lb.
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