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IXGH56N60B3 - Medium-Speed Low Vsat PT IGBT

Features

  • z Optimized for Low Conduction and Switching Losses z Square RBSOA z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement.

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Full PDF Text Transcription

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Advance Technical Information GenX3TM 600V IGBT IXGH56N60B3* *Obsolete Part Number VCES = IC110 = VCE(sat) ≤ 600V 56A 1.80V Medium-Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM e IC25 IC110 t ICM SSOA (RBSOA) le Pd TJ TJM Tstg o TL TSOLD Md s Weight TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting torque b Symbol Test Conditions O (TJ = 25°C, Unless Otherwise Specified) 600 600 ± 20 ± 30 130 56 350 ICM = 150 VCE ≤ VCES 330 - 55 ... +150 150 - 40 ... +150 300 260 1.
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