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IXGH36N60B3D1 - Medium-Speed Low-Vsat PT IGBT

Features

  • z Optimized for Low Conduction and Switching Losses z Square RBSOA z Anti-Parallel Ultra Fast Diode z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement.

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GenX3TM 600V IGBT w/ Diode IXGH36N60B3D1 Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching VCES = IC110 = VCE(sat) ≤ 600V 36A 1.8V TO-247 Symbol VCES VCGR VGES VGEM IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 110°C TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque Maximum Ratings 600 V 600 V ± 20 V ± 30 V 36 A 30 A 200 A ICM = 80 A VCE ≤ VCES 250 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in.
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